IPN70R2K0P7SATMA1 vs IPD60R1K0PFD7SAUMA1 Comparison
Detailed side-by-side comparison of IPN70R2K0P7SATMA1 by Infineon and IPD60R1K0PFD7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD60R1K0PFD7SAUMA1 - 600V 1Ξ© CoolMOS PFD7 | Infineon | DPAK
IPD60R1K0PFD7SAUMA1 β ActiveSpecification Comparison
| Parameter | IPN70R2K0P7SATMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.36 |
| Manufacturer | Infineon Technologies | β |
| Part Family | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 3 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 6 W | β |
| On-Resistance (RDS(on)) | 2.0 Ξ© (max, VGS=10 V) | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) | Β±20 V (max gate-source) |
| Gate-Source Voltage (VGS max) | Β±20 V | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +150C (TJ) |
| Package | PG-SOT223 (3 leads + tab) | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| Mounting Type | Surface Mount | Surface Mount |
| Integrated ESD Diode | Yes | β |
| RoHS Status | Compliant (ROHS3) | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Continuous Drain Current (ID) at TC | β | 4.7 A |
| Power Dissipation (PD) at TC | β | 26 W |
| Drain-Source On-Resistance (RDS(on)) | β | 1 Ξ© @ VGS=10V |
| Gate Charge (QG) | β | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | β | 230 pF @ 400 V |
| Gate Drive Voltage (recommended) | β | 10 V (full enhancement) |
| Series | β | CoolMOS PFD7 consumer / superjunction |