IPN95R1K2P7ATMA1 vs IPN95R3K7P7ATMA1 Comparison

Detailed side-by-side comparison of IPN95R1K2P7ATMA1 by Infineon and IPN95R3K7P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPN95R1K2P7ATMA1 IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 - 950V CoolMOS P7 N-Channel MOSFET | Infineon

IPN95R1K2P7ATMA1 βœ“ Active
Infineon
IPN95R3K7P7ATMA1

IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon

IPN95R3K7P7ATMA1 βœ“ Active

Specification Comparison

Parameter IPN95R1K2P7ATMA1 IPN95R3K7P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.36 $0.44
FET Type N-Channel β€”
Technology CoolMOS P7 (Super Junction) Super-junction (CoolMOS P7)
Drain-to-Source Voltage (V_DSS) 950 V β€”
Continuous Drain Current (I_D) at T_C 6 A β€”
Maximum On-Resistance R_DS(on) at V_GS=10V 1200 mOhm (1.2 Ohm) β€”
Gate Drive Voltage (max R_DS(on)) 10 V β€”
Power Dissipation (T_C) 7 W β€”
Package SOT-223-3 (PG-SOT223) PG-SOT223 (3-pin + tab, surface mount)
Mounting Type Surface Mount Surface Mount
Pin Count 3 (2 + Tab) β€”
Series CoolMOS P7 CoolMOS P7
Operating Temperature Range -55C to +150C β€”
Packaging Tape & Reel β€”
RoHS Status Compliant Compliant
Part Status Active β€”
Manufacturer β€” Infineon Technologies
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 950 V
Continuous Drain Current (ID) at Tc β€” 2.0 A
Power Dissipation (Pd) at Tc β€” 6 W
On-State Resistance (RDS(on)) max β€” 3700 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ β€” [DATA_NEEDED: VGS(th) typ]
Operating Junction Temperature β€” -55 C to +150 C
Lead-Free β€” Yes
MSL Level β€” [DATA_NEEDED: MSL rating]

Datasheets & Resources

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