IPN95R3K7P7ATMA1 vs IPL65R070C7AUMA1 Comparison
Detailed side-by-side comparison of IPN95R3K7P7ATMA1 by Infineon and IPL65R070C7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN95R3K7P7ATMA1
IPN95R3K7P7ATMA1 - 950V CoolMOS P7 N-MOSFET 2A SOT-223 | Infineon
IPN95R3K7P7ATMA1 β ActiveInfineon
IPL65R070C7AUMA1
IPL65R070C7AUMA1 - 650V 70mΞ© CoolMOS C7 MOSFET | Infineon
IPL65R070C7AUMA1 β ActiveSpecification Comparison
| Parameter | IPN95R3K7P7ATMA1 | IPL65R070C7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.44 | $1.68 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS C7 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 950 V | 650 V |
| Continuous Drain Current (ID) at Tc | 2.0 A | β |
| Power Dissipation (Pd) at Tc | 6 W | β |
| On-State Resistance (RDS(on)) max | 3700 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typ] | β |
| Technology | Super-junction (CoolMOS P7) | Superjunction N-Channel MOSFET |
| Package | PG-SOT223 (3-pin + tab, surface mount) | PG-VSON-4 (surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Junction Temperature | -55 C to +150 C | -55Β°C to +150Β°C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 28 A |
| Continuous Drain Current (ID) at TC=100Β°C | β | [DATA_NEEDED: ID at TC=100Β°C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 70 mΞ© (typical) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 169 W |
| Avalanche Energy (EAS) | β | 171 mJ |
| Configuration | β | Single with built-in diode |
| Channel Type | β | N-Channel |