IPP100N12S305AKSA1 vs IPB027N10N3GATMA1 Comparison

Detailed side-by-side comparison of IPP100N12S305AKSA1 by Infineon and IPB027N10N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP100N12S305AKSA1 IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon

IPP100N12S305AKSA1 βœ“ Active
Infineon
IPB027N10N3GATMA1 IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΞ© | Infineon

IPB027N10N3GATMA1 - 100V OptiMOS 3 N-FET, 2.7mΞ© | Infineon

IPB027N10N3GATMA1 βœ“ Active

Specification Comparison

Parameter IPP100N12S305AKSA1 IPB027N10N3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $1.62
Transistor Type N-Channel MOSFET β€”
Technology OptiMOS trench OptiMOS 3 (Trench MOSFET)
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID) at Tc 100 A β€”
Pulsed Drain Current [DATA_NEEDED: pulsed ID value] β€”
Maximum Power Dissipation (Ptot) at Tc 300 W β€”
Gate-Source Voltage (VGS) max Β±20 V Β±20 V
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] β€”
Avalanche Energy, Single Pulse [DATA_NEEDED: EAS] β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package TO-220 (PG-TO220-3-1) PG-TO263-3 (D2PAK)
Mounting Type Through Hole Surface Mount
Pin Count 3 β€”
MSL Moisture Sensitivity Level 1 (260 Β°C peak reflow) β€”
Automotive Qualification AEC-Q101 qualified β€”
Avalanche Tested 100% tested β€”
RoHS Compliance Compliant (Green product) β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TC=25Β°C β€” 120 A
Power Dissipation (PD) at TC=25Β°C β€” 300 W
On-Resistance RDS(on) max at VGS=10V β€” 3.4 mΞ©
On-Resistance RDS(on) typical at VGS=10V β€” 2.7 mΞ©
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: typical and min/max VGS(th) values]
Operating Temperature Range β€” -55Β°C to +175Β°C (TJ)
Thermal Resistance Junction-to-Case (RΞΈJC) β€” [DATA_NEEDED: exact Β°C/W value]
Single Pulse Avalanche Energy (EAS) β€” [DATA_NEEDED: datasheet EAS figure]
RoHS Status β€” Compliant
MSL Level β€” [DATA_NEEDED: moisture sensitivity level]
Total Gate Charge (Qg) β€” [DATA_NEEDED: typical Qg at VGS=10V]

Datasheets & Resources

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