IPP100N12S305AKSA2 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of IPP100N12S305AKSA2 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 β ActiveInfineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | IPP100N12S305AKSA2 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.78 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 120 V | 25 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | β |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | β |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (TJ) | β |
| Package | PG-TO220-3-1 (Through Hole) | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Through Hole | Surface Mount |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | N/A (Through Hole) | 1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Technology | β | N-Channel MOSFET (OptiMOS 25V) |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 33 A |
| Continuous Drain Current (ID, Tc) | β | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | β | 100 A |
| On-State Resistance RDS(on) | β | 1.4 mOhm (typ) at VGS = 10 V |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typ at VGS=10V] |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 74 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| Lead-Free | β | Yes |