IPP100N12S305AKSA2 vs IHW40N120R5XKSA1 Comparison
Detailed side-by-side comparison of IPP100N12S305AKSA2 by Infineon and IHW40N120R5XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 β Active
Specification Comparison
| Parameter | IPP100N12S305AKSA2 | IHW40N120R5XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.78 | $3.50 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID, TC=25C) | 100 A | β |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | β |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (TJ) | β |
| Package | PG-TO220-3-1 (Through Hole) | TO-247-3 (PG-TO247-3) through-hole |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | β |
| MSL Level | N/A (Through Hole) | N/A (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Collector-Emitter Voltage (VCE) | β | 1200 V |
| Continuous Collector Current (IC, TC=25C) | β | 80 A |
| Pulsed Collector Current (ICM) | β | 160 A |
| Maximum Power Dissipation (Ptot) | β | 394 W |
| Gate-Emitter Voltage (VGE) | β | +/-20 V |
| VCE(sat) at IC=40A, VGE=15V, Tj=25C | β | [DATA_NEEDED: typical VCE(sat) value] |
| Integrated Anti-Parallel Diode | β | Yes (monolithic reverse-conducting) |
| Technology | β | Trench Field Stop, Reverse-Conducting RC-H5 |
| Operating Junction Temperature | β | -40C to +175C |
| Storage Temperature | β | -55C to +150C |
| Soldering Temperature (max 10s) | β | 260 C |
| Switching Application | β | Resonant / soft switching (induction cooking optimized) |
| RoHS Compliance | β | Compliant |
| Halogen-Free | β | Yes |