IPP100N12S305AKSA2 vs IPP100N12S305AKSA1 Comparison
Detailed side-by-side comparison of IPP100N12S305AKSA2 by Infineon and IPP100N12S305AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 β ActiveInfineon
IPP100N12S305AKSA1 - 120V 100A OptiMOS N-Channel MOSFET | Infineon
IPP100N12S305AKSA1 β ActiveSpecification Comparison
| Parameter | IPP100N12S305AKSA2 | IPP100N12S305AKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.78 | $2.05 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 120 V | 120 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | β |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | β |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (TJ) | β |
| Package | PG-TO220-3-1 (Through Hole) | TO-220 (PG-TO220-3-1) |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | 3 |
| RoHS Status | Compliant | β |
| MSL Level | N/A (Through Hole) | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Transistor Type | β | N-Channel MOSFET |
| Technology | β | OptiMOS trench |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current | β | [DATA_NEEDED: pulsed ID value] |
| Maximum Power Dissipation (Ptot) at Tc | β | 300 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Avalanche Energy, Single Pulse | β | [DATA_NEEDED: EAS] |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| MSL Moisture Sensitivity Level | β | 1 (260 Β°C peak reflow) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Avalanche Tested | β | 100% tested |
| RoHS Compliance | β | Compliant (Green product) |