IPP100N12S305AKSA2 vs IPP147N12N3GXKSA1 Comparison
Detailed side-by-side comparison of IPP100N12S305AKSA2 by Infineon and IPP147N12N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 β ActiveInfineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPP100N12S305AKSA2 | IPP147N12N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.78 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID, TC=25C) | 100 A | β |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | β |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | β |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | β |
| Operating Temperature Range | -55C to +175C (TJ) | [DATA_NEEDED: Tj max and operating range] |
| Package | PG-TO220-3-1 (Through Hole) | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Pin Count | 3 (Gate, Drain, Source) | β |
| RoHS Status | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| MSL Level | N/A (Through Hole) | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Series | β | OptiMOS |
| Technology | β | OptiMOS 3 trench MOSFET |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | β | 120 V |
| Continuous Drain Current (Id) at Tc=25C | β | 56 A |
| Continuous Drain Current (Id) at Ta | β | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | β | 107 W |
| Number of Pins | β | 3 (3+Tab) |
| Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | β | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | β | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | β | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | β | Single-pulse avalanche rated |
| Lead-Free | β | Yes |
| Qualification | β | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | β | Tube |