IPP100N12S305AKSA2 vs IPP320N20N3GXKSA1 Comparison

Detailed side-by-side comparison of IPP100N12S305AKSA2 by Infineon and IPP320N20N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPP100N12S305AKSA2 IPP320N20N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.78 $1.36
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 3
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 120 V 200 V
Continuous Drain Current (ID, TC=25C) 100 A β€”
Continuous Drain Current (ID, TC=100C) [DATA_NEEDED: ID at TC=100C] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
Maximum Power Dissipation (PD, TC=25C) 300 W β€”
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] β€”
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] 4 V
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: total gate charge] β€”
Total Gate Charge Qg [DATA_NEEDED: Qg value] β€”
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] β€”
Operating Temperature Range -55C to +175C (TJ) -55Β°C to +175Β°C
Package PG-TO220-3-1 (Through Hole) TO-220-3 (PG-TO220-3) through-hole
Mounting Type Through Hole Through Hole
Pin Count 3 (Gate, Drain, Source) β€”
RoHS Status Compliant Compliant
MSL Level N/A (Through Hole) Not applicable (through-hole)
Avalanche Energy Rated Yes (single-pulse) β€”
Technology β€” N-Channel Trench MOSFET
Continuous Drain Current (ID) at TC=25Β°C β€” 34 A
On-State Resistance RDS(on) max at VGS=10V β€” 32 mΞ©
Total Power Dissipation PD at TC=25Β°C β€” 136 W
Number of Pins β€” 3 (3 + Tab)
Channel Type β€” N-Channel
Element Configuration β€” Single
Lead-Free β€” Yes

Datasheets & Resources

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