IPP120N08S403AKSA1 vs IPW60R041C6FKSA1 Comparison

Detailed side-by-side comparison of IPP120N08S403AKSA1 by Infineon and IPW60R041C6FKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 βœ“ Active

Specification Comparison

Parameter IPP120N08S403AKSA1 IPW60R041C6FKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Nrnd
Stock Status In Stock In Stock
Unit Price (USD) $1.28 $5.40
Manufacturer Infineon Technologies β€”
Part Family OptiMOS Power MOSFET β€”
Transistor Type N-Channel Enhancement Mode β€”
Drain-to-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID, Tc) 120 A β€”
Power Dissipation (PD, Tc) 278 W β€”
On-State Resistance (RDS(on)) 2.8 mOhm at VGS=10 V, ID=100 A 41 mΞ© at VGS=10V
Gate-Source Voltage (VGS) +/-20 V β€”
Total Gate Charge (Qg) 167 nC at VGS=10 V [DATA_NEEDED: Qg value]
Input Capacitance (Ciss) 11550 pF at VDS=25 V β€”
Operating Junction Temperature -55 C to +175 C β€”
Package TO-220-3-1 (PG-TO220-3-1) PG-TO247-3-1 (TO-247-3)
Mounting Type Through Hole Through Hole
Pin Count 3 β€”
MSL Level MSL1 (peak reflow 260 C) Not Applicable (Through-hole)
Automotive Qualification AEC-Q101 β€”
RoHS Status Compliant (Green Product) Compliant
Avalanche Tested 100% Avalanche Tested β€”
Technology β€” CoolMOSβ„’ C6 (Superjunction N-channel)
Drain-Source Voltage (VDS) β€” 600 V
Continuous Drain Current (ID, Tc=25Β°C) β€” 77.5 A
Power Dissipation (PD, Tc=25Β°C) β€” 481 W
Gate-Source Voltage (VGS) max β€” Β±20 V
Gate Threshold Voltage (VGS(th)) β€” 2.5 V to 3.5 V typical
Rise Time (tr) β€” [DATA_NEEDED: tr value]
Fall Time (tf) β€” [DATA_NEEDED: tf value]
Operating Temperature Range β€” -55Β°C to +150Β°C
Lead-Free β€” Yes

Datasheets & Resources

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