IPP320N20N3GXKSA1 vs IPP075N15N3GXKSA1 Comparison

Detailed side-by-side comparison of IPP320N20N3GXKSA1 by Infineon and IPP075N15N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 βœ“ Active

Specification Comparison

Parameter IPP320N20N3GXKSA1 IPP075N15N3GXKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.36 $1.92
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 3
Technology N-Channel Trench MOSFET N-Channel MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 200 V 150 V
Continuous Drain Current (ID) at TC=25Β°C 34 A β€”
On-State Resistance RDS(on) max at VGS=10V 32 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 4 V β€”
Total Power Dissipation PD at TC=25Β°C 136 W β€”
Package TO-220-3 (PG-TO220-3) through-hole PG-TO220-3 (TO-220 through-hole)
Mounting Type Through Hole Through Hole
Number of Pins 3 (3 + Tab) β€”
Operating Temperature Range -55Β°C to +175Β°C [DATA_NEEDED: junction operating temperature range]
Channel Type N-Channel β€”
Element Configuration Single β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
MSL Level Not applicable (through-hole) β€”
Continuous Drain Current (ID, Tc=25C) β€” 100 A
Power Dissipation (PD, Tc=25C) β€” 300 W
On-State Resistance (RDS(on) max, VGS=10V) β€” 7.5 mOhm
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
Lead-Free / RoHS β€” RoHS Compliant
Ordering Code Suffix β€” GXKSA1 (Tube pack, RoHS compliant)

Datasheets & Resources

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