IPP320N20N3GXKSA1 vs IPP100N12S305AKSA2 Comparison

Detailed side-by-side comparison of IPP320N20N3GXKSA1 by Infineon and IPP100N12S305AKSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPP320N20N3GXKSA1 IPP100N12S305AKSA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.36 $3.78
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 5
Technology N-Channel Trench MOSFET β€”
Drain-Source Voltage (VDS) 200 V 120 V
Continuous Drain Current (ID) at TC=25Β°C 34 A β€”
On-State Resistance RDS(on) max at VGS=10V 32 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 4 V [DATA_NEEDED: VGS(th)]
Total Power Dissipation PD at TC=25Β°C 136 W β€”
Package TO-220-3 (PG-TO220-3) through-hole PG-TO220-3-1 (Through Hole)
Mounting Type Through Hole Through Hole
Number of Pins 3 (3 + Tab) β€”
Operating Temperature Range -55Β°C to +175Β°C -55C to +175C (TJ)
Channel Type N-Channel β€”
Element Configuration Single β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level Not applicable (through-hole) N/A (Through Hole)
FET Type β€” N-Channel
Continuous Drain Current (ID, TC=25C) β€” 100 A
Continuous Drain Current (ID, TC=100C) β€” [DATA_NEEDED: ID at TC=100C]
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, TC=25C) β€” 300 W
On-State Resistance R_DS(on) max @ VGS=10V β€” [DATA_NEEDED: R_DS(on) max]
Gate Charge Qg typ @ VGS=10V β€” [DATA_NEEDED: total gate charge]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg value]
Reverse Recovery Charge Qrr β€” [DATA_NEEDED: Qrr value]
Pin Count β€” 3 (Gate, Drain, Source)
Avalanche Energy Rated β€” Yes (single-pulse)

Datasheets & Resources

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