IPP320N20N3GXKSA1 vs IPP147N12N3GXKSA1 Comparison
Detailed side-by-side comparison of IPP320N20N3GXKSA1 by Infineon and IPP147N12N3GXKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 β ActiveInfineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 β ActiveSpecification Comparison
| Parameter | IPP320N20N3GXKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.36 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | β |
| Technology | N-Channel Trench MOSFET | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 34 A | β |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 4 V | β |
| Total Power Dissipation PD at TC=25Β°C | 136 W | β |
| Package | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Number of Pins | 3 (3 + Tab) | 3 (3+Tab) |
| Operating Temperature Range | -55Β°C to +175Β°C | [DATA_NEEDED: Tj max and operating range] |
| Channel Type | N-Channel | β |
| Element Configuration | Single | β |
| RoHS Status | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| MSL Level | Not applicable (through-hole) | β |
| Series | β | OptiMOS |
| Transistor Type | β | N-Channel MOSFET |
| Configuration | β | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | β | 120 V |
| Continuous Drain Current (Id) at Tc=25C | β | 56 A |
| Continuous Drain Current (Id) at Ta | β | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | β | 107 W |
| Gate Charge (Qg) | β | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | β | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | β | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | β | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | β | Single-pulse avalanche rated |
| Qualification | β | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | β | Tube |