IPP60R180P7XKSA1 vs IPA60R190C6XKSA1 Comparison

Detailed side-by-side comparison of IPP60R180P7XKSA1 by Infineon and IPA60R190C6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPA60R190C6XKSA1 IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 - 600V 20.2A CoolMOS C6 N-MOSFET | Infineon

IPA60R190C6XKSA1 βœ“ Active

Specification Comparison

Parameter IPP60R180P7XKSA1 IPA60R190C6XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.30 $1.18
Manufacturer Infineon Technologies Infineon Technologies
Technology CoolMOS P7 (Superjunction N-Channel) β€”
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID) at TC=25Β°C 18 A β€”
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25Β°C] β€”
On-Resistance RDS(on) max at VGS=10V 180 mΞ© β€”
Gate Threshold Voltage VGS(th) typ 3.5 V β€”
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V] β€”
Power Dissipation PD at TC=25Β°C 72 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C -55C to +150C
Package PG-TO220-3 (through-hole) PG-TO220-FP (TO-220 FullPAK, 3+tab)
Mounting Type Through Hole Through Hole
Number of Pins 3 (Gate, Drain, Source) β€”
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level N/A (through-hole) β€”
Product Family β€” CoolMOS C6
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID, Tc=25C) β€” 20.2 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD, Tc=25C) β€” 34 W
On-State Resistance (RDS(on)) β€” 190 mOhm at VGS=10V, ID=9.5A
Gate Threshold Voltage (VGS(th)) β€” 3.5 V
Gate Charge (Qg, typ) β€” [DATA_NEEDED: Qg typ]
Tab Isolation β€” Fully isolated (4 kV)
Lead Free β€” Yes

Datasheets & Resources

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