IPP60R180P7XKSA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IPP60R180P7XKSA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP60R180P7XKSA1 - 600V 18A 180mΞ© CoolMOS P7 MOSFET | Infineon
IPP60R180P7XKSA1 β ActiveInfineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveSpecification Comparison
| Parameter | IPP60R180P7XKSA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.30 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25Β°C | 18 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25Β°C] | β |
| On-Resistance RDS(on) max at VGS=10V | 180 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | β |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | β |
| Power Dissipation PD at TC=25Β°C | 72 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +150C |
| Package | PG-TO220-3 (through-hole) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Mounting Type | Through Hole | Surface Mount |
| Number of Pins | 3 (Gate, Drain, Source) | β |
| Avalanche Energy Rated | Yes | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | N/A (through-hole) | [DATA_NEEDED: MSL rating] |
| Series | β | CoolMOS P7 |
| On-Resistance (RDS(on)) max | β | 105 mΞ© |
| Continuous Drain Current (ID) at Tc | β | 33 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | β | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.5 V |
| Gate Charge (Qg) typ | β | 45 nC |
| Channel Type | β | N-Channel |
| Halogen-Free | β | Yes |