IPP60R180P7XKSA1 vs IPP100N12S305AKSA2 Comparison
Detailed side-by-side comparison of IPP60R180P7XKSA1 by Infineon and IPP100N12S305AKSA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP60R180P7XKSA1 - 600V 18A 180mΞ© CoolMOS P7 MOSFET | Infineon
IPP60R180P7XKSA1 β ActiveInfineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 β ActiveSpecification Comparison
| Parameter | IPP60R180P7XKSA1 | IPP100N12S305AKSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.30 | $3.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | CoolMOS P7 (Superjunction N-Channel) | β |
| Drain-Source Voltage (VDS) | 600 V | 120 V |
| Continuous Drain Current (ID) at TC=25Β°C | 18 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25Β°C] | β |
| On-Resistance RDS(on) max at VGS=10V | 180 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | [DATA_NEEDED: VGS(th)] |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | β |
| Power Dissipation PD at TC=25Β°C | 72 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +175C (TJ) |
| Package | PG-TO220-3 (through-hole) | PG-TO220-3-1 (Through Hole) |
| Mounting Type | Through Hole | Through Hole |
| Number of Pins | 3 (Gate, Drain, Source) | β |
| Avalanche Energy Rated | Yes | Yes (single-pulse) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | N/A (through-hole) | N/A (Through Hole) |
| Product Family | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, TC=25C) | β | 100 A |
| Continuous Drain Current (ID, TC=100C) | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, TC=25C) | β | 300 W |
| On-State Resistance R_DS(on) max @ VGS=10V | β | [DATA_NEEDED: R_DS(on) max] |
| Gate Charge Qg typ @ VGS=10V | β | [DATA_NEEDED: total gate charge] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg value] |
| Reverse Recovery Charge Qrr | β | [DATA_NEEDED: Qrr value] |
| Pin Count | β | 3 (Gate, Drain, Source) |