IPP60R180P7XKSA1 vs IPW60R041C6FKSA1 Comparison
Detailed side-by-side comparison of IPP60R180P7XKSA1 by Infineon and IPW60R041C6FKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPP60R180P7XKSA1 | IPW60R041C6FKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.30 | $5.40 |
| Manufacturer | Infineon Technologies | — |
| Technology | CoolMOS P7 (Superjunction N-Channel) | CoolMOS™ C6 (Superjunction N-channel) |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25°C | 18 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed drain current at TC=25°C] | — |
| On-Resistance RDS(on) max at VGS=10V | 180 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Power Dissipation PD at TC=25°C | 72 W | — |
| Operating Temperature Range | -55 °C to +150 °C | -55°C to +150°C |
| Package | PG-TO220-3 (through-hole) | PG-TO247-3-1 (TO-247-3) |
| Mounting Type | Through Hole | Through Hole |
| Number of Pins | 3 (Gate, Drain, Source) | — |
| Avalanche Energy Rated | Yes | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | N/A (through-hole) | Not Applicable (Through-hole) |
| Continuous Drain Current (ID, Tc=25°C) | — | 77.5 A |
| Power Dissipation (PD, Tc=25°C) | — | 481 W |
| On-State Resistance (RDS(on)) | — | 41 mΩ at VGS=10V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 2.5 V to 3.5 V typical |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Rise Time (tr) | — | [DATA_NEEDED: tr value] |
| Fall Time (tf) | — | [DATA_NEEDED: tf value] |