IPP60R190P6XKSA1 vs IPB60R190C6ATMA1 Comparison
Detailed side-by-side comparison of IPP60R190P6XKSA1 by Infineon and IPB60R190C6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPP60R190P6XKSA1 | IPB60R190C6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $1.45 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolMOS P6 | β |
| Technology | Superjunction (SJ) MOSFET | CoolMOS C6 Superjunction N-Channel MOSFET |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | 20.2 A |
| On-Resistance RDS(on) max at 25C | 190 mOhm | β |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | β |
| Package | PG-TO220-3 (through-hole) | PG-TO263-3 (D2PAK) |
| Mounting Type | Through Hole | Surface Mount |
| Gate Drive Voltage (typical) | 10 V | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | Not applicable (through-hole) | 1 |
| Product Variant | XKSA1 (industrial grade, tube pack) | β |
| Power Dissipation (PD) at Tc=25C | β | 151 W |
| On-Resistance RDS(on) max at VGS=10V | β | 190 mOhm |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | β | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | β | 32 nC |
| Pin Count | β | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | β | Yes (EAS per datasheet) |