IPP60R190P6XKSA1 vs IPP60R180P7XKSA1 Comparison
Detailed side-by-side comparison of IPP60R190P6XKSA1 by Infineon and IPP60R180P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPP60R180P7XKSA1 - 600V 18A 180mΞ© CoolMOS P7 MOSFET | Infineon
IPP60R180P7XKSA1 β ActiveSpecification Comparison
| Parameter | IPP60R190P6XKSA1 | IPP60R180P7XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.02 | $1.30 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P6 | β |
| Technology | Superjunction (SJ) MOSFET | CoolMOS P7 (Superjunction N-Channel) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at Tc=25C | 20.2 A | β |
| On-Resistance RDS(on) max at 25C | 190 mOhm | β |
| Total Power Dissipation (Ptot) at Tc=25C | 151 W | β |
| Package | PG-TO220-3 (through-hole) | PG-TO220-3 (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Gate Drive Voltage (typical) | 10 V | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| MSL Level | Not applicable (through-hole) | N/A (through-hole) |
| Product Variant | XKSA1 (industrial grade, tube pack) | β |
| Continuous Drain Current (ID) at TC=25Β°C | β | 18 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current at TC=25Β°C] |
| On-Resistance RDS(on) max at VGS=10V | β | 180 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Gate Charge Qg typ | β | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25Β°C | β | 72 W |
| Number of Pins | β | 3 (Gate, Drain, Source) |
| Avalanche Energy Rated | β | Yes |