IPT007N06NATMA1 vs BSS316NH6327XTSA1 Comparison
Detailed side-by-side comparison of IPT007N06NATMA1 by Infineon and BSS316NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT007N06NATMA1 | BSS316NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $0.13 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 2 (Trench) |
| Drain-Source Voltage (VDS) | 60 V | 30 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Power Dissipation (PD, TC=25C) | 375 W | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel | β |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Standard Pack Quantity | 3000 (Tape & Reel) | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) at TA=25C | β | 1.4 A |
| Drain-Source On-Resistance RDS(on) max | β | 160 mOhm at VGS=10V, ID=1.4A |
| Gate-Source Threshold Voltage VGS(th) typ | β | 2 V at ID=3.7 uA |
| Total Gate Charge (Qg) | β | 600 pC at VGS=5 V |
| Input Capacitance (Ciss) | β | 94 pF at VDS=15 V |
| Output Capacitance (Coss) | β | [DATA_NEEDED: output capacitance] |
| Reverse Transfer Capacitance (Crss) | β | [DATA_NEEDED: reverse transfer capacitance] |
| Maximum Power Dissipation (PD) at TA=25C | β | 500 mW |
| Operating Junction Temperature Range | β | -55 C to +150 C |
| Lead Plating | β | Pb-free (Matte Tin) |
| Automotive Qualification | β | AEC-Q101 qualified |