IPT012N08N5ATMA1 vs IAUT300N08S5N011ATMA1 Comparison
Detailed side-by-side comparison of IPT012N08N5ATMA1 by Infineon and IAUT300N08S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT012N08N5ATMA1
IPT012N08N5ATMA1 - 80V 300A OptiMOS 5 N-Ch MOSFET | Infineon
IPT012N08N5ATMA1 β ActiveInfineon
IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
IAUT300N08S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | IPT012N08N5ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.32 | $5.40 |
| Manufacturer | Infineon Technologies | β |
| Part Number | IPT012N08N5ATMA1 | β |
| Technology | OptiMOS 5 | OptiMOS 5 (trench MOSFET) |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) Max | 80 V | β |
| Continuous Drain Current (ID, TC) | 300 A | β |
| Pulsed Drain Current (IDM) | 400 A | β |
| On-Resistance RDS(on) Max | 1.2 mOhm | β |
| Total Gate Charge QG | 208 nC | β |
| Gate-to-Drain Charge QGD | 178 nC | β |
| Power Dissipation (PD, TC) | 375 W | β |
| Package | PG-HSOF-8 (TOLL) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (TJ max) | -55C to +175C |
| RoHS Status | Compliant | β |
| Qualification | JEDEC JESD47, JESD22, J-STD-020 (industrial) | Automotive (AEC-Q101) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | β | 300 A |
| Pulsed Drain Current (I_DM) | β | 410 A (Tj) |
| R_DS(on) max | β | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.8 V |
| Total Gate Charge (Q_g) | β | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | β | 16.25 nF |
| Output Capacitance (C_oss) | β | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | β | 130 pF |
| Power Dissipation (P_D) | β | 375 W at T_C=25C |
| MSL Level | β | 1 |