IPT015N10NF2SATMA1 vs ISC015N06NM5LF2ATMA1 Comparison
Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and ISC015N06NM5LF2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT015N10NF2SATMA1
IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 β ActiveInfineon
ISC015N06NM5LF2ATMA1
ISC015N06NM5LF2ATMA1 - 60V 1.5mΞ© OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 β ActiveSpecification Comparison
| Parameter | IPT015N10NF2SATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.10 | $2.21 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, Tc) | 315 A | β |
| Continuous Drain Current (ID, Ta) | 35 A | β |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΞ© | β |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 Β΅A | β |
| Total Power Dissipation (Ta) | 3.8 W | β |
| Total Power Dissipation (Tc) | 300 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-10 (9-pin, 8+tab) | PG-TDSON-8 FL (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 5 Linear FET 2 (N-Channel) |
| Gate Drive Voltage (typ) | 10 V | β |
| Single-Pulse Avalanche Energy | [DATA_NEEDED: EAS value] | β |
| RoHS Status | Compliant | β |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Pulsed Drain Current (IDM) at Tc | β | 275 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 217 W |
| On-Resistance RDS(on) max at VGS=10V | β | 1.55 mΞ© |
| On-Resistance RDS(on) at VGS=10V (typ) | β | 1.3 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3 V |
| Gate-Source Voltage Rating | β | Β±20 V |
| Reverse Recovery Charge (Qrr) | β | 1.3 nC |
| Input Capacitance (Ciss) | β | 6.9 nF |
| Output Capacitance (Coss) | β | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | β | 55 pF |
| Total Gate Charge (Qg) | β | 90 nC |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| RoHS | β | Compliant |