IPT017N12NM6ATMA1 vs BSC12DN20NS3GATMA1 Comparison

Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and BSC12DN20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 βœ“ Active
Infineon
BSC12DN20NS3GATMA1

BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon

BSC12DN20NS3GATMA1 βœ“ Active

Specification Comparison

Parameter IPT017N12NM6ATMA1 BSC12DN20NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $0.61
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT017N12NM6ATMA1 β€”
Technology OptiMOS 6 OptiMOS power MOSFET
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 120 V 200 V
Continuous Drain Current (ID) at Ta 29 A β€”
Continuous Drain Current (ID) at Tc 331 A β€”
On-Resistance RDS(on) max 1.7 mOhm β€”
Power Dissipation at Ta 3 W β€”
Power Dissipation at Tc 395 W β€”
Package PG-HSOF-8 (TOLL) PG-TDSON-8-5
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Pin Count 8 + tab 8
Packaging Tape & Reel β€”
RoHS Status Compliant Compliant
Product Family β€” OptiMOS 200V
Continuous Drain Current (ID, Tc) β€” 11.3 A
Power Dissipation (PD, Tc) β€” 50 W
Operating Temperature Range β€” [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold typical]
On-Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) at VGS=10V]
Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]
MSL Level β€” 1 (per JEDEC J-STD-020)
Configuration β€” Single N-channel

Datasheets & Resources

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