IPT017N12NM6ATMA1 vs IPT008N06NM5LFATMA1 Comparison

Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and IPT008N06NM5LFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 βœ“ Active
Infineon
IPT008N06NM5LFATMA1

IPT008N06NM5LFATMA1 - 60V 454A 0.8mΞ© N-Ch MOSFET HSOF-8 | Infineon

IPT008N06NM5LFATMA1 βœ“ Active

Specification Comparison

Parameter IPT017N12NM6ATMA1 IPT008N06NM5LFATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $5.40
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT017N12NM6ATMA1 β€”
Technology OptiMOS 6 Trench MOSFET (OptiMOS 5)
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 120 V 60 V
Continuous Drain Current (ID) at Ta 29 A β€”
Continuous Drain Current (ID) at Tc 331 A β€”
On-Resistance RDS(on) max 1.7 mOhm β€”
Power Dissipation at Ta 3 W β€”
Power Dissipation at Tc 395 W β€”
Package PG-HSOF-8 (TOLL) PG-HSOF-8 (single, flat-lead)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Pin Count 8 + tab β€”
Packaging Tape & Reel β€”
RoHS Status Compliant Compliant
Part Family β€” OptiMOS 5 / Linear FET
Continuous Drain Current (ID, Tc) β€” 454 A
Pulsed Drain Current β€” [DATA_NEEDED: pulsed ID]
On-Resistance RDS(on) at VGS=10 V β€” 0.8 mΞ©
Gate-Source Threshold Voltage VGS(th) β€” 3.6 V (typ, 250 Β΅A test)
Power Dissipation (Tc) β€” 278 W
Operating Temperature Range β€” -55 Β°C to +175 Β°C (TJ)
Gate Drive (recommended) β€” 10 V (logic-level compatible above 4.5 V VGS)
MSL Level β€” 1 (per JEDEC J-STD-020)
REACH Status β€” Compliant
AEC-Q100 β€” not_qualified (industrial-grade by default)

Datasheets & Resources

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