IPT017N12NM6ATMA1 vs IPTC017N12NM6ATMA1 Comparison

Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and IPTC017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IPT017N12NM6ATMA1 IPTC017N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $3.95
Manufacturer Infineon Technologies β€”
Part Number IPT017N12NM6ATMA1 β€”
Technology OptiMOS 6 OptiMOS 6, N-channel trench MOSFET
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 120 V 120 V
Continuous Drain Current (ID) at Ta 29 A β€”
Continuous Drain Current (ID) at Tc 331 A β€”
On-Resistance RDS(on) max 1.7 mOhm β€”
Power Dissipation at Ta 3 W β€”
Power Dissipation at Tc 395 W β€”
Package PG-HSOF-8 (TOLL) PG-HDSOP-16 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C -55 Β°C to +175 Β°C (TJ max)
Pin Count 8 + tab β€”
Packaging Tape & Reel β€”
RoHS Status Compliant Compliant
Continuous Drain Current (ID, Ta) β€” 32 A
Continuous Drain Current (ID, Tc) β€” 331 A
On-State Resistance RDS(on) max β€” 1.7 mΞ© at VGS = 10 V
Gate-Source Threshold VGS(th) β€” 2.4 V (typ)
Total Gate Charge QG β€” 141 nC at VGS = 10 V
Input Capacitance Ciss β€” 2.4 nF at VDS = 60 V
Output Capacitance Coss β€” 11000 pF at VDS = 60 V
Power Dissipation (Ta) β€” 3.8 W
Power Dissipation (Tc) β€” 395 W
Gate Drive Voltage (recommended) β€” 10 V

Datasheets & Resources

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