IPT017N12NM6ATMA1 vs IQE220N15NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT017N12NM6ATMA1
IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon
IPT017N12NM6ATMA1 β ActiveInfineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IPT017N12NM6ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 | β |
| Technology | OptiMOS 6 | OptiMOS 5, Source-Down |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 120 V | 150 V |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | 331 A | β |
| On-Resistance RDS(on) max | 1.7 mOhm | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 395 W | β |
| Package | PG-HSOF-8 (TOLL) | PG-WHTFN-9 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +175C | β |
| Pin Count | 8 + tab | β |
| Packaging | Tape & Reel | β |
| RoHS Status | Compliant | Compliant |
| Series | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Continuous Drain Current at Ta (ID) | β | 7 A |
| Continuous Drain Current at Tc (ID) | β | 44 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 100 W |
| On-Resistance (RDS(on)) | β | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | β | 4.6 V |
| Operating Temperature Range | β | -55C to +150C (junction) |