IPT017N12NM6ATMA1 vs ISZ019N03L5SATMA1 Comparison

Detailed side-by-side comparison of IPT017N12NM6ATMA1 by Infineon and ISZ019N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IPT017N12NM6ATMA1 ISZ019N03L5SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $0.48
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT017N12NM6ATMA1 β€”
Technology OptiMOS 6 β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 120 V 30 V
Continuous Drain Current (ID) at Ta 29 A β€”
Continuous Drain Current (ID) at Tc 331 A β€”
On-Resistance RDS(on) max 1.7 mOhm β€”
Power Dissipation at Ta 3 W β€”
Power Dissipation at Tc 395 W β€”
Package PG-HSOF-8 (TOLL) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
Pin Count 8 + tab β€”
Packaging Tape & Reel β€”
RoHS Status Compliant β€”
Product Family β€” OptiMOS 5 (<= 40V)
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 22 A
Continuous Drain Current (ID) at TC=25C β€” 40 A
RDS(on) at VGS=10V β€” 1.9 mΞ© (typical, ID=20A)
Gate Threshold Voltage (VGS(th)) β€” 2 V (typical)
Gate-Source Voltage Rating (VGS) β€” Β±20 V
Total Gate Charge (Qg) β€” 44 nC at VGS=10V
Input Capacitance (Ciss) β€” 2800 pF at VDS=15V
Operating Temperature Range β€” -55C to +175C (TJ max)
MSL Level β€” 1 (per JEDEC J-STD-020)
RoHS / REACH β€” Compliant
Avalanche Rated β€” Yes
RG-tested β€” 100%

Datasheets & Resources

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