IPT026N10N5ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IPT026N10N5ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT026N10N5ATMA1
IPT026N10N5ATMA1 - 100V 2.6mΞ© OptiMOS 5 MOSFET TOLL | Infineon
IPT026N10N5ATMA1 β ActiveInfineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IPT026N10N5ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.87 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS-5 40 V |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 202 A | β |
| Continuous Drain Current (ID, Ta) | 27 A | β |
| Maximum RDS(on) at VGS=10V | 2.6 mΞ© | β |
| Maximum Power Dissipation (Tc=25Β°C) | 214 W | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55C to +175C |
| Configuration | Single with built-in diode | β |
| Number of Terminals | 8 | β |
| Technology | Trench (OptiMOS 5) | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL1 (260C peak reflow) |
| Gate Charge (Qg typ) | [DATA_NEEDED: typical Qg] | β |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |