IPT030N12N3GATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IPT030N12N3GATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT030N12N3GATMA1
IPT030N12N3GATMA1 - 120V 237A 3mΞ© N-Channel OptiMOS 3 | Infineon
IPT030N12N3GATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IPT030N12N3GATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.78 | $0.82 |
| Channel Type | N-Channel | β |
| Configuration | Single | Dual N-Channel (independent MOSFETs) |
| Maximum Drain-Source Voltage (VDS) | 120 V | β |
| Maximum Gate-Source Voltage (VGS) | 20 V | β |
| Maximum Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Maximum On-Resistance (RDS(on)) | 3 mΞ© | β |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) | β |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) | β |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) | β |
| Power Dissipation (PD) at Tc | 375 W (Tc) | β |
| Technology | OptiMOS 3 | Trench MOSFET (OptiMOS 3) |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-HSOF-8-1 (TOLL) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) | β |
| RoHS Status | Compliant with Exemption | β |
| Channel Mode | Enhancement | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |