IPT030N12N3GATMA1 vs IQE018N06NM6CGATMA1 Comparison
Detailed side-by-side comparison of IPT030N12N3GATMA1 by Infineon and IQE018N06NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT030N12N3GATMA1
IPT030N12N3GATMA1 - 120V 237A 3mΞ© N-Channel OptiMOS 3 | Infineon
IPT030N12N3GATMA1 β ActiveInfineon
IQE018N06NM6CGATMA1
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IPT030N12N3GATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.78 | $1.21 |
| Channel Type | N-Channel | N-Channel |
| Configuration | Single | β |
| Maximum Drain-Source Voltage (VDS) | 120 V | β |
| Maximum Gate-Source Voltage (VGS) | 20 V | β |
| Maximum Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Maximum On-Resistance (RDS(on)) | 3 mΞ© | β |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) | β |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) | β |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) | β |
| Power Dissipation (PD) at Tc | 375 W (Tc) | β |
| Technology | OptiMOS 3 | Trench MOSFET, OptiMOS 6 |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-TTFN-9-3 (TOLL/TTFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) | β |
| RoHS Status | Compliant with Exemption | β |
| Channel Mode | Enhancement | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 6 60V |
| Drain-Source Voltage (V_DS) | β | 60 V |
| Continuous Drain Current (I_D, Tc) | β | 178 A |
| Continuous Drain Current (I_D, Ta) | β | 25 A |
| R_DS(on) max (V_GS=10 V) | β | 1.8 mΞ© |
| Gate Threshold Voltage (V_GS(th)) | β | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 125 W |
| Operating Temperature Range | β | -55C to +175C (junction) |
| RoHS Compliance | β | Compliant |