IPT030N12N3GATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of IPT030N12N3GATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT030N12N3GATMA1
IPT030N12N3GATMA1 - 120V 237A 3mΞ© N-Channel OptiMOS 3 | Infineon
IPT030N12N3GATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | IPT030N12N3GATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.78 | $0.41 |
| Channel Type | N-Channel | β |
| Configuration | Single | β |
| Maximum Drain-Source Voltage (VDS) | 120 V | β |
| Maximum Gate-Source Voltage (VGS) | 20 V | β |
| Maximum Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Maximum On-Resistance (RDS(on)) | 3 mΞ© | β |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) | β |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) | β |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) | β |
| Power Dissipation (PD) at Tc | 375 W (Tc) | β |
| Technology | OptiMOS 3 | Trench MOSFET, silicon |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) | β |
| RoHS Status | Compliant with Exemption | β |
| Channel Mode | Enhancement | β |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |