IPT059N15N3ATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPT059N15N3ATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT059N15N3ATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.05 $0.49
Transistor Type N-Channel MOSFET
Technology OptiMOS™ 3 (trench) N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) max 150 V
Continuous Drain Current (ID) at TC=25°C 155 A
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 5.9 mΩ
Power Dissipation (PD) at TC=25°C 375 W
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg typical]
Package PG-HSOF-8-1 (TOLL / TO-Leadless) PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +175 °C (TJ max 175 °C)
Pin Count 8 + exposed source tab 3 (2 + Tab)
RoHS Status Compliant Compliant
MSL Level 1
Automotive Qualified No (industrial grade; non-AEC-Q)
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) at Tc 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V 9 mΩ
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc 71 W
Operating Junction Temperature -55 °C to +175 °C
Automotive Qualification AEC-Q101
Lead-Free / Halogen-Free [DATA_NEEDED]

Datasheets & Resources

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