IPT067N20NM6ATMA1 vs IPT012N08N5ATMA1 Comparison
Detailed side-by-side comparison of IPT067N20NM6ATMA1 by Infineon and IPT012N08N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT067N20NM6ATMA1
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β ActiveInfineon
IPT012N08N5ATMA1
IPT012N08N5ATMA1 - 80V 300A OptiMOS 5 N-Ch MOSFET | Infineon
IPT012N08N5ATMA1 β ActiveSpecification Comparison
| Parameter | IPT067N20NM6ATMA1 | IPT012N08N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $4.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 200 V | β |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | β |
| Continuous Drain Current (ID) at TC=25C | 137 A | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 300 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-HSOF-8-1 (8-pin + exposed tab) | PG-HSOF-8 (TOLL) |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +175C (TJ max) |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 5 |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | β |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | β |
| Configuration | Single N-channel | β |
| Part Number | β | IPT012N08N5ATMA1 |
| Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) Max | β | 80 V |
| Continuous Drain Current (ID, TC) | β | 300 A |
| Pulsed Drain Current (IDM) | β | 400 A |
| On-Resistance RDS(on) Max | β | 1.2 mOhm |
| Total Gate Charge QG | β | 208 nC |
| Gate-to-Drain Charge QGD | β | 178 nC |
| Power Dissipation (PD, TC) | β | 375 W |
| Qualification | β | JEDEC JESD47, JESD22, J-STD-020 (industrial) |