IPT067N20NM6ATMA1 vs ISC009N06LM5ATMA1 Comparison
Detailed side-by-side comparison of IPT067N20NM6ATMA1 by Infineon and ISC009N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT067N20NM6ATMA1
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β Active
Specification Comparison
| Parameter | IPT067N20NM6ATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $2.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | β |
| Continuous Drain Current (ID) at TC=25C | 137 A | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 300 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TSON-8-3 (SuperSO8 5x6) |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 5 60V N-channel trench MOSFET |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | β |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL rating] |
| Configuration | Single N-channel | β |
| Series | β | OptiMOS 5 |
| Continuous Drain Current (ID) at Ta | β | 41 A |
| Continuous Drain Current (ID) at Tc | β | 348 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | β | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | β | 0.9 mOhm |
| Power Dissipation at Ta (PD) | β | 3 W |
| Power Dissipation at Tc (PD) | β | 214 W |