IPT067N20NM6ATMA1 vs ISC011N06LM5ATMA1 Comparison
Detailed side-by-side comparison of IPT067N20NM6ATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT067N20NM6ATMA1
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β ActiveInfineon
ISC011N06LM5ATMA1
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 β ActiveSpecification Comparison
| Parameter | IPT067N20NM6ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 200 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | β |
| Continuous Drain Current (ID) at TC=25C | 137 A | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 300 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +175C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 5 |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | β |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | [DATA_NEEDED: MSL level] |
| Configuration | Single N-channel | β |
| Part Number | β | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 37 A |
| Continuous Drain Current (ID) at Tc | β | 288 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 188 W |
| RDS(on) max at VGS=10V | β | 1.15 mOhm |
| Pin Count | β | 8 |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |