IPT067N20NM6ATMA1 vs ISC0805NLSATMA1 Comparison
Detailed side-by-side comparison of IPT067N20NM6ATMA1 by Infineon and ISC0805NLSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT067N20NM6ATMA1
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β ActiveInfineon
ISC0805NLSATMA1
ISC0805NLSATMA1 - 100V 71A N-Ch OptiMOS 5 MOSFET | Infineon
ISC0805NLSATMA1 β ActiveSpecification Comparison
| Parameter | IPT067N20NM6ATMA1 | ISC0805NLSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOSβ’ 5 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | β |
| Continuous Drain Current (ID) at TC=25C | 137 A | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 300 W | β |
| Mounting Type | Surface Mount | Surface Mount |
| Package | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TDSON-8-46 (SuperSO8 5x6) |
| Operating Temperature Range | -55C to +150C (junction) | -55 Β°C to +150 Β°C |
| Technology | Trench-gate OptiMOS 6 silicon | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | β |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | β |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | β |
| Configuration | Single N-channel | β |
| Continuous Drain Current (ID) at TA=25Β°C | β | 13 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 71 A |
| Power Dissipation (PD) at TA | β | 2.5 W |
| Power Dissipation (PD) at TC | β | 74 W |
| On-Resistance RDS(on) max at VGS=10V | β | 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] |
| On-Resistance RDS(on) max at VGS=4.5V | β | 10.7 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 2.3 V |
| Gate Charge Qg typ at VGS=4.5V | β | 16 nC |
| Input Capacitance Ciss | β | 2.2 nF |
| Reverse Transfer Capacitance Crss | β | 23 pF |
| Output Capacitance Coss | β | 360 pF |