IPTC017N12NM6ATMA1 vs IGD08N120S7ATMA1 Comparison
Detailed side-by-side comparison of IPTC017N12NM6ATMA1 by Infineon and IGD08N120S7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΞ© 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 β Active
Specification Comparison
| Parameter | IPTC017N12NM6ATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.95 | $1.65 |
| Technology | OptiMOS 6, N-channel trench MOSFET | Trench Field Stop, 7th generation |
| Drain-Source Voltage (VDS) | 120 V | β |
| Continuous Drain Current (ID, Ta) | 32 A | β |
| Continuous Drain Current (ID, Tc) | 331 A | β |
| On-State Resistance RDS(on) max | 1.7 mΞ© at VGS = 10 V | β |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | β |
| Total Gate Charge QG | 141 nC at VGS = 10 V | β |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | β |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | β |
| Power Dissipation (Ta) | 3.8 W | β |
| Power Dissipation (Tc) | 395 W | β |
| Package | PG-HDSOP-16 (Surface Mount) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 Β°C to +175 Β°C (TJ max) | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | β | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | β | 24 A |
| Pulsed Collector Current (Icm) | β | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | β | 106 W |
| Gate-Emitter Voltage (Vge max) | β | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | β | 1.65 V |
| Co-packaged Diode | β | Yes (anti-parallel emitter diode) |
| Operating Junction Temperature | β | -40C to +175C (industry grade) |
| Configuration | β | Single |