IPTC017N12NM6ATMA1 vs IPT017N12NM6ATMA1 Comparison

Detailed side-by-side comparison of IPTC017N12NM6ATMA1 by Infineon and IPT017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPT017N12NM6ATMA1

IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon

IPT017N12NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IPTC017N12NM6ATMA1 IPT017N12NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.95 $1.85
Technology OptiMOS 6, N-channel trench MOSFET OptiMOS 6
Drain-Source Voltage (VDS) 120 V 120 V
Continuous Drain Current (ID, Ta) 32 A β€”
Continuous Drain Current (ID, Tc) 331 A β€”
On-State Resistance RDS(on) max 1.7 mΞ© at VGS = 10 V β€”
Gate-Source Threshold VGS(th) 2.4 V (typ) β€”
Total Gate Charge QG 141 nC at VGS = 10 V β€”
Input Capacitance Ciss 2.4 nF at VDS = 60 V β€”
Output Capacitance Coss 11000 pF at VDS = 60 V β€”
Power Dissipation (Ta) 3.8 W β€”
Power Dissipation (Tc) 395 W β€”
Package PG-HDSOP-16 (Surface Mount) PG-HSOF-8 (TOLL)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 Β°C to +175 Β°C (TJ max) -55C to +175C
Gate Drive Voltage (recommended) 10 V β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Number β€” IPT017N12NM6ATMA1
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 29 A
Continuous Drain Current (ID) at Tc β€” 331 A
On-Resistance RDS(on) max β€” 1.7 mOhm
Power Dissipation at Ta β€” 3 W
Power Dissipation at Tc β€” 395 W
Pin Count β€” 8 + tab
Packaging β€” Tape & Reel

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