IPTC017N12NM6ATMA1 vs ISZ230N10NM6ATMA1 Comparison

Detailed side-by-side comparison of IPTC017N12NM6ATMA1 by Infineon and ISZ230N10NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ230N10NM6ATMA1

ISZ230N10NM6ATMA1 - 100V 31A OptiMOS 6 N-MOSFET | Infineon

ISZ230N10NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IPTC017N12NM6ATMA1 ISZ230N10NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.95 $0.71
Technology OptiMOS 6, N-channel trench MOSFET OptiMOS 6 trench MOSFET
Drain-Source Voltage (VDS) 120 V 100 V
Continuous Drain Current (ID, Ta) 32 A β€”
Continuous Drain Current (ID, Tc) 331 A β€”
On-State Resistance RDS(on) max 1.7 mΞ© at VGS = 10 V β€”
Gate-Source Threshold VGS(th) 2.4 V (typ) β€”
Total Gate Charge QG 141 nC at VGS = 10 V β€”
Input Capacitance Ciss 2.4 nF at VDS = 60 V β€”
Output Capacitance Coss 11000 pF at VDS = 60 V β€”
Power Dissipation (Ta) 3.8 W 3 W
Power Dissipation (Tc) 395 W 48 W
Package PG-HDSOP-16 (Surface Mount) PG-TSDSON-8 FL (3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 Β°C to +175 Β°C (TJ max) β€”
Gate Drive Voltage (recommended) 10 V 10 V
RoHS Status Compliant Compliant
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (Ta) β€” 7.7 A
Continuous Drain Current (Tc) β€” 31 A
On-Resistance RDS(on) at VGS=10V β€” 23 mΞ© (typ, ID=10A)
Gate Threshold Voltage VGS(th) β€” 3.3 V (typ at 13 Β΅A)
Operating Temperature Range β€” -55 Β°C to +150 Β°C (junction)
MSL Level β€” MSL1 (per JEDEC J-STD-020)
Family β€” OptiMOS 6 (100V class)

Datasheets & Resources

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