IPTG025N15NM6ATMA1 vs IAUC100N04S6N028ATMA1 Comparison
Detailed side-by-side comparison of IPTG025N15NM6ATMA1 by Infineon and IAUC100N04S6N028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β ActiveInfineon
IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N028ATMA1 β ActiveSpecification Comparison
| Parameter | IPTG025N15NM6ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | MOSFET (Metal Oxide) |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TA=25C | 26 A | β |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 395 W | β |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | β |
| Package | PG-HSOG-8-1 (TOLG) | PG-TDSON-8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (typical for OptiMOS 6) | -55 Β°C to +175 Β°C |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | β |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | β |
| Series | β | OptiMOS 6 40V |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D) at T_C=25Β°C | β | 100 A |
| Pulsed Drain Current (I_DM) | β | 400 A |
| R_DS(on) max @ V_GS=10V | β | 2.8 mΞ© (typical) |
| Gate Threshold Voltage (V_GS(th)) | β | 1.5 V to 2.5 V |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g in nC] |
| Power Dissipation (P_D) at T_C=25Β°C | β | 62 W |
| Automotive Qualified | β | Yes |