IPTG025N15NM6ATMA1 vs IPT067N20NM6ATMA1 Comparison
Detailed side-by-side comparison of IPTG025N15NM6ATMA1 by Infineon and IPT067N20NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β ActiveInfineon
IPT067N20NM6ATMA1
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPTG025N15NM6ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $4.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | Trench-gate OptiMOS 6 silicon |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | 200 V |
| Continuous Drain Current (ID) at TA=25C | 26 A | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | 137 A |
| Power Dissipation (PD) at TA=25C | 3.8 W | 3.8 W |
| Power Dissipation (PD) at TC=25C | 395 W | 300 W |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | β |
| Package | PG-HSOG-8-1 (TOLG) | PG-HSOF-8-1 (8-pin + exposed tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (typical for OptiMOS 6) | -55C to +150C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | β |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | β |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | β | Yes |
| MSL Level | β | [DATA_NEEDED: MSL moisture sensitivity level] |
| Configuration | β | Single N-channel |