IPTG025N15NM6ATMA1 vs IQE220N15NM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IPTG025N15NM6ATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β ActiveInfineon
IQE220N15NM5CGSCATMA1
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IPTG025N15NM6ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | OptiMOS 5, Source-Down |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at TA=25C | 26 A | β |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 395 W | β |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | β |
| Package | PG-HSOG-8-1 (TOLG) | PG-WHTFN-9 (Source-Down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (typical for OptiMOS 6) | -55C to +150C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | β |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | β |
| Series | β | OptiMOS 5 |
| FET Type | β | N-Channel |
| Continuous Drain Current at Ta (ID) | β | 7 A |
| Continuous Drain Current at Tc (ID) | β | 44 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 100 W |
| On-Resistance (RDS(on)) | β | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | β | 4.6 V |