IPTG025N15NM6ATMA1 vs ISZ072N06NM6ATMA1 Comparison
Detailed side-by-side comparison of IPTG025N15NM6ATMA1 by Infineon and ISZ072N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β ActiveInfineon
ISZ072N06NM6ATMA1
ISZ072N06NM6ATMA1 - 60V 57A OptiMOS 6 N-MOSFET | Infineon
ISZ072N06NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPTG025N15NM6ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.52 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 6 150 V (N-channel trench) | OptiMOS 6 trench MOSFET |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 26 A | β |
| Continuous Drain Current (ID) at TC=25C | 264 A (pulsed) | β |
| Power Dissipation (PD) at TA=25C | 3.8 W | β |
| Power Dissipation (PD) at TC=25C | 395 W | β |
| On-State Resistance RDS(on) typ | 2.5 mOhm at VGS=10 V | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg value] | β |
| Package | PG-HSOG-8-1 (TOLG) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (typical for OptiMOS 6) | -55C to +175C ( Tj max 175C ) |
| RoHS Status | Compliant | Compliant |
| MSL (Moisture Sensitivity Level) | MSL1 (per JEDEC J-STD-020) | β |
| Solder Joint Reliability | Excellent - 30% smaller footprint than D2PAK | β |
| Product Family | β | OptiMOS 6 60V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 57 A |
| Continuous Drain Current (ID, Ta) | β | 12.7 A |
| RDS(on) max @ VGS=10V | β | 7.2 mΞ© |
| Gate Threshold Voltage (VGS(th)) | β | 3.3 V (typ) |
| Power Dissipation (Tc=25Β°C) | β | 50 W |
| Power Dissipation (Ta) | β | 2.5 W |
| MSL Level | β | 1 |