IPW60R037P7XKSA1 vs IPL60R125P7AUMA1 Comparison
Detailed side-by-side comparison of IPW60R037P7XKSA1 by Infineon and IPL60R125P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R125P7AUMA1
IPL60R125P7AUMA1 - 600V CoolMOS P7 MOSFET 125mΞ© 27A | Infineon
IPL60R125P7AUMA1 β ActiveSpecification Comparison
| Parameter | IPW60R037P7XKSA1 | IPL60R125P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.55 | $1.95 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOSβ’ P7 | β |
| Transistor Type | N-Channel MOSFET (Superjunction) | β |
| Drain-Source Voltage (V_DSS) | 600 V | β |
| Continuous Drain Current (I_D, Tc=25 Β°C) | 76 A | β |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΞ© | β |
| Power Dissipation (P_D, Tc=25 Β°C) | 255 W | β |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | β |
| Package | PG-TO247-3 (TO-247-3, through-hole) | ThinPAK 8x8 (4-pin + exposed pad) |
| Mounting Type | Through Hole | Surface Mount |
| Operating Junction Temperature | -55 Β°C to +150 Β°C | -55 C to +150 C |
| Technology | CoolMOS Superjunction (SJ) | Superjunction (SJ) N-channel MOSFET |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | β |
| Product Family | β | CoolMOS P7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25C) | β | 27 A |
| On-State Resistance RDS(on) max | β | 125 mOhm |
| Gate Charge (Qg, typ) | β | 36 nC |
| Total Gate Charge Qg (typ) | β | 36 nC |
| Output Capacitance Coss (typ) | β | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | β | [DATA_NEEDED: Qrr] |
| Rise Time / Fall Time (tr/tf) | β | [DATA_NEEDED: tr/tf] |
| Gate-Source Voltage (VGS) | β | +/-20 V (max) |
| Gate Threshold Voltage VGS(th), typ | β | 3.5 V |
| Avalanche Energy (EAS) | β | [DATA_NEEDED: EAS] |
| Moisture Sensitivity Level (MSL) | β | MSL 2 (per JEDEC J-STD-020) |
| Pin Configuration | β | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 |