IPW60R041C6FKSA1 vs IPP120N08S403AKSA1 Comparison

Detailed side-by-side comparison of IPW60R041C6FKSA1 by Infineon and IPP120N08S403AKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPP120N08S403AKSA1 IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 - 80V 120A N-Ch MOSFET | Infineon OptiMOS

IPP120N08S403AKSA1 βœ“ Active

Specification Comparison

Parameter IPW60R041C6FKSA1 IPP120N08S403AKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Nrnd Active
Stock Status In Stock In Stock
Unit Price (USD) $5.40 $1.28
Technology CoolMOSβ„’ C6 (Superjunction N-channel) β€”
Drain-Source Voltage (VDS) 600 V β€”
Continuous Drain Current (ID, Tc=25Β°C) 77.5 A β€”
Power Dissipation (PD, Tc=25Β°C) 481 W β€”
On-State Resistance (RDS(on)) 41 mΞ© at VGS=10V 2.8 mOhm at VGS=10 V, ID=100 A
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] 167 nC at VGS=10 V
Rise Time (tr) [DATA_NEEDED: tr value] β€”
Fall Time (tf) [DATA_NEEDED: tf value] β€”
Operating Temperature Range -55Β°C to +150Β°C β€”
Package PG-TO247-3-1 (TO-247-3) TO-220-3-1 (PG-TO220-3-1)
Mounting Type Through Hole Through Hole
MSL Level Not Applicable (Through-hole) MSL1 (peak reflow 260 C)
RoHS Status Compliant Compliant (Green Product)
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS Power MOSFET
Transistor Type β€” N-Channel Enhancement Mode
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID, Tc) β€” 120 A
Power Dissipation (PD, Tc) β€” 278 W
Gate-Source Voltage (VGS) β€” +/-20 V
Input Capacitance (Ciss) β€” 11550 pF at VDS=25 V
Operating Junction Temperature β€” -55 C to +175 C
Pin Count β€” 3
Automotive Qualification β€” AEC-Q101
Avalanche Tested β€” 100% Avalanche Tested

Datasheets & Resources

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