IPW60R041C6FKSA1 vs IPP60R180P7XKSA1 Comparison

Detailed side-by-side comparison of IPW60R041C6FKSA1 by Infineon and IPP60R180P7XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPW60R041C6FKSA1 IPP60R180P7XKSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Nrnd Active
Stock Status In Stock In Stock
Unit Price (USD) $5.40 $1.30
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS P7 (Superjunction N-Channel)
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25°C) 77.5 A
Power Dissipation (PD, Tc=25°C) 481 W
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V
Gate-Source Voltage (VGS) max ±20 V
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical
Total Gate Charge (Qg) [DATA_NEEDED: Qg value]
Rise Time (tr) [DATA_NEEDED: tr value]
Fall Time (tf) [DATA_NEEDED: tf value]
Operating Temperature Range -55°C to +150°C -55 °C to +150 °C
Package PG-TO247-3-1 (TO-247-3) PG-TO220-3 (through-hole)
Mounting Type Through Hole Through Hole
MSL Level Not Applicable (Through-hole) N/A (through-hole)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Manufacturer Infineon Technologies
Continuous Drain Current (ID) at TC=25°C 18 A
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current at TC=25°C]
On-Resistance RDS(on) max at VGS=10V 180 mΩ
Gate Threshold Voltage VGS(th) typ 3.5 V
Gate Charge Qg typ [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation PD at TC=25°C 72 W
Number of Pins 3 (Gate, Drain, Source)
Avalanche Energy Rated Yes

Datasheets & Resources

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