IQD005N04NM6CGATMA1 vs BSC093N15NS5ATMA1 Comparison

Detailed side-by-side comparison of IQD005N04NM6CGATMA1 by Infineon and BSC093N15NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD005N04NM6CGATMA1

IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 βœ“ Active

Specification Comparison

Parameter IQD005N04NM6CGATMA1 BSC093N15NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.83
FET Type N-Channel N-Channel
Technology OptiMOS 6 (trench FET) OptiMOS 5 150V
Drain-to-Source Voltage (VDS) 40 V β€”
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
RDS(on) Typical 0.5 mΞ© β€”
Continuous Drain Current (ID) at Ta 58 A β€”
Continuous Drain Current (ID) at Tc 610 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed rating] β€”
Power Dissipation at Ta 3 W β€”
Power Dissipation at Tc 333 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) [DATA_NEEDED: operating temperature range]
Package PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²) SuperSO8 5x6 (PG-TDSON-8-7)
Mounting Type Surface Mount Surface Mount
Pin Count 9 β€”
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Source Configuration Source-Down (bottom-side source for PCB heatsinking) β€”
Manufacturer β€” Infineon Technologies
Drain-Source Voltage (VDS) Max β€” 150 V
Continuous Drain Current (ID) at TC β€” 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V β€” 9.3 mΞ©
Power Dissipation (PD) at TC β€” 139 W
Gate Drive Voltage (VGS) Recommended β€” 10 V
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge Qg]
Halogen Free β€” [DATA_NEEDED: halogen free status]

Datasheets & Resources

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