IQD005N04NM6CGATMA1 vs ISC046N13NM6ATMA1 Comparison

Detailed side-by-side comparison of IQD005N04NM6CGATMA1 by Infineon and ISC046N13NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD005N04NM6CGATMA1

IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 βœ“ Active
Infineon
ISC046N13NM6ATMA1

ISC046N13NM6ATMA1 - 135V N-Ch MOSFET 142A | Infineon

ISC046N13NM6ATMA1 βœ“ Active

Specification Comparison

Parameter IQD005N04NM6CGATMA1 ISC046N13NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $1.08
FET Type N-Channel β€”
Technology OptiMOS 6 (trench FET) OptiMOS 6 trench MOSFET
Drain-to-Source Voltage (VDS) 40 V β€”
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
RDS(on) Typical 0.5 mΞ© β€”
Continuous Drain Current (ID) at Ta 58 A β€”
Continuous Drain Current (ID) at Tc 610 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed rating] β€”
Power Dissipation at Ta 3 W β€”
Power Dissipation at Tc 333 W β€”
Operating Temperature Range -55 Β°C to +150 Β°C (TJ) -55 C to +175 C
Package PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 9 β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Source Configuration Source-Down (bottom-side source for PCB heatsinking) β€”
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS 6
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 135 V
Continuous Drain Current (ID) at TA β€” 17 A
Continuous Drain Current (ID) at TC β€” 142 A
Power Dissipation (PD) at TA β€” 3 W
Power Dissipation (PD) at TC β€” 211 W
Package / Case β€” PG-TDSON-8
Gate Drive (recommended) β€” 10 V (typical)
Packaging β€” Tape & Reel

Datasheets & Resources

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