IQD005N04NM6CGATMA1 vs ISC058N04NM5ATMA1 Comparison
Detailed side-by-side comparison of IQD005N04NM6CGATMA1 by Infineon and ISC058N04NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD005N04NM6CGATMA1
IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon
IQD005N04NM6CGATMA1 β ActiveInfineon
ISC058N04NM5ATMA1
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 β ActiveSpecification Comparison
| Parameter | IQD005N04NM6CGATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.60 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 5 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| RDS(on) Typical | 0.5 mΞ© | β |
| Continuous Drain Current (ID) at Ta | 58 A | β |
| Continuous Drain Current (ID) at Tc | 610 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 333 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ) | -55C to +175C |
| Package | PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 9 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 40V Normal Level |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25C) | β | 63 A |
| Continuous Drain Current (ID, Ta=25C) | β | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | β | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 3.4 V |
| Power Dissipation (TA=25C) | β | 3 W |
| Power Dissipation (TC=25C) | β | 42 W |
| RoHS Compliance | β | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | β | MSL per JEDEC J-STD-020 |
| Gate Drive Level | β | Normal Level (10V VGS recommended) |