IQDH35N03LM5CGATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of IQDH35N03LM5CGATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IQDH35N03LM5CGATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.45 $0.78
Drain-to-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) at Ta 66 A β€”
Pulsed Drain Current (IDM) at Tc 700 A β€”
Gate-to-Source Voltage (VGS) max Β±20 V β€”
Static Drain-to-Source On-Resistance (RDS(on)) 0.35 mΞ© (typical at VGS=10 V) β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 278 W β€”
Operating Temperature Range -55 Β°C to +175 Β°C -55C to +150C (Tj)
Package PG-TTFN-9-U02 (PQFN 5x6 mmΒ²) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS Status Compliant β€”
Halogen-Free Yes Yes, per IEC 61249-2-21
Channel Type N-Channel β€”
Technology OptiMOS 5 trench MOSFET β€”
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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